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c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 www. ruichips .com ru 6 0 99 n - channel advanced power mosfet mosfet features pin description applications symbol parameter r ating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 6 0 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 1 2 0 ( max) a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 3 8 0 a t c =25 c 12 0 i d continuous drain current t c =100 c 90 a t c =25 c 20 0 p d maximum power dissipation t c =100 c 15 0 w r q jc thermal resistance - junction to case 0.8 c /w drain - source avalanche ratings e as av alanche energy, single pulsed 100 0 m j ? 6 0 v/ 12 0a, r ds ( on ) = 6 m w (type ) v gs =10v i ds = 40 a ? ultra low on - resistance ? exceptional dv/dt capability ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operat ing temperature ? lead free and green available ? switching a pplication systems ? inverter systems absolute maximum ratings to - 220 to - 220f to - 263 to - 247 n - channel mosfe t free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 2 www. ruichips .com ru 6 0 99 electrical characteristics ( t a =25 c unless otherwise noted) ru 6 0 99 symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds = - 250 m a 6 0 v v ds = 6 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 40 a 6 .0 7.0 m w notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 20 a, v gs =0v 0.8 3 1. 1 v t rr reverse recovery time 50 ns q rr reverse recovery charge i sd = 40 a, dl sd /dt=100a/ m s 95 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 3 w c iss input capacitance 3 0 00 c oss output capacitance 4 3 0 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 2 4 0 pf t d ( on ) turn - on delay time 1 4 27 t r turn - on rise time 17 31 t d ( off ) turn - off delay time 40 68 t f turn - off fall time v dd = 30 v, r l = 30 w , i ds = 1a, v gen = 10v, r g = 8 w 62 95 ns gate charge characteristics q g total gate charge 7 2 1 0 5 q gs gate - source charge 1 3 q gd gate - drain charge v ds = 30 v, v gs = 10v, i ds = 40 a 2 4 nc free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 3 www. ruichips .com ru 6 0 99 typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec) free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 4 www. ruichips .com ru 6 0 99 typical characteristics output characteristics dr ain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c) free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 5 www. ruichips .com ru 6 0 99 typical characteristics drain - source on resistance source - drain diode forward normalized on re sistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc) free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 6 www. ruichips .com ru 6 0 99 avalanche test circuit and waveforms switching time test circuit and waveforms free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 7 www. ruichips .com ru 6 0 99 ordering and marking information ru 6 0 99 package (available) r : to - 220; s: to - 263 ; p: to - 220f operating temperature range c : - 55 to 175 oc assembly material g : green & lead free packaging t : tube tr : tape & reel free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 8 www. ruichips .com ru 6 0 99 package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.3 43 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401 free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 9 www. ruichips .com ru 6 0 99 to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4. 40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0 .048 - 0.052 l 2 2.50ref . 0.098ref . c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610 free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 10 www. ruichips .com ru 6 0 99 to - 220f - 3l all dimensions refer to jedec standard do not include mold flash o r protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max e 9.96 10.16 10.36 0.392 0. 400 0.408 ?p 3 - 3.450 - - 0.136 - a 4.50 4.70 4.90 0.177 0.185 0.193 1 5 7 9 5 7 9 a 1 2.34 2.54 2.74 0.092 0.100 0.108 2 - 45 - - 45 - a2 0.95 1.05 1.15 0.037 0.041 0.045 dep 0.05 0.10 0.15 0.002 0.004 0.006 a3 0.42 0.52 0.62 0.017 0.020 0.024 f1 1.90 2.00 2.10 0.075 0.079 0.083 a4 2.65 2.75 2.85 0.104 0.108 0 .112 f2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - f3 3.20 3.30 3.40 0.126 0.130 0.134 d 15.67 15.87 16.07 0.617 0.625 0.633 g 3.25 3.45 3.65 0.128 0.136 0.144 q 8.80 9.00 9.20 0.346 0.354 0.362 g1 5.90 6.00 6.10 0.232 0.236 0.240 h 1 6.48 6.68 6.88 0.255 0.263 0.271 g2 6.90 7.00 7.10 0.272 0.276 0.280 e 2.54bsc 0.1bsc b1 1.17 1.20 1.24 0.046 0.047 0.048 ?p - 3.183 - - 0.125 - b2 0.77 0.8 0.85 0.030 0.031 0.033 l 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 d1 8.99 9.19 9.39 0.354 0.362 0.370 e1 9.8 10.00 10.20 0.386 0.394 0.412 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 k1 0.75 0.8 0.85 0.030 0.031 0.033 ?p 2 1.15 1.20 1.25 0.045 0.047 0.049 free datasheet http://
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2009 11 www. ruichips .com ru 6 0 99 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na t el: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com free datasheet http://

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